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Compositional dependence of ferroelectric properties of highly c-axis oriented Bi4-xNdxTi3O12 film capacitors SCIE SCOPUS

Title
Compositional dependence of ferroelectric properties of highly c-axis oriented Bi4-xNdxTi3O12 film capacitors
Authors
Chon, UShim, JSJang, HM
Date Issued
2004-02
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Abstract
Highly c-axis oriented neodymium-modified bismuth titanate (Bi4-xNdxTi3O12) films having a variety of neodymium (Nd) contents were successfully grown on Pt/TiO2/SiO2/Si(100) substrates using metal-organic sol decomposition. After systematically examining ferroelectric properties of the c-axis oriented Bi4-xNdxTi3O12 film capacitors as a function of the Nd-content, we concluded that the capacitor with x = 0.85 had the largest remanent polarization. The Bi3.15Nd0.85Ti3O12 capacitor fabricated using a top Pt electrode showed well-saturated polarization-electric field (P-E) switching curves with the remanent polarization (P-gamma) of 51 muC/cm(2) and the coercive field (E-c) of 99 kV/cm at an applied voltage of 10 V. More importantly, the Pt/Bi3.15Nd0.85Ti3O12/Pt capacitor exhibited fatigue-free behavior up to 4.5 X 10(10) read/write switching cycles at a frequency of 1 MHz. The capacitor also demonstrated an excellent charge-retaining ability and a strong resistance against the imprinting failure. (C) 2003 Elsevier Ltd. All rights reserved.
Keywords
neodymium-modified bismuth titanate; FRAM; MOSD; fatigue-free; BI3.25LA0.75TI3O12 THIN-FILMS; CHEMICAL-VAPOR-DEPOSITION; BISMUTH TITANATE; POLARIZATION; FATIGUE; PT/TI/SIO2/SI(100); MEMORIES
URI
https://oasis.postech.ac.kr/handle/2014.oak/18103
DOI
10.1016/j.ssc.2003.11.016
ISSN
0038-1098
Article Type
Article
Citation
SOLID STATE COMMUNICATIONS, vol. 129, no. 7, page. 465 - 468, 2004-02
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장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
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