DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, WI | - |
dc.contributor.author | Yi, GC | - |
dc.date.accessioned | 2016-03-31T12:37:10Z | - |
dc.date.available | 2016-03-31T12:37:10Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-01-05 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.other | 2004-OAK-0000004002 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18105 | - |
dc.description.abstract | Electrolurninescent (EL) devices (see Figure) have been fabricated using n-ZnO nanorod arrays grown on p-GaN epilayers. Simple heteroepitaxial growth yields vertically aligned ZnO nanorods with an abrupt interface on GaN. The p-n heterojunction EL device shows a high current density and strong electroluminescence even at a reverse-bias voltage of 3 V. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | ADVANCED MATERIALS | - |
dc.subject | OPTOELECTRONIC DEVICES | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | BAND | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | EMISSIONS | - |
dc.title | Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1002/ADMA.2003057 | - |
dc.author.google | Park, WI | - |
dc.author.google | Yi, GC | - |
dc.relation.volume | 16 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 87 | - |
dc.relation.journal | ADVANCED MATERIALS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.16, no.1, pp.87 - + | - |
dc.identifier.wosid | 000188702500019 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | + | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 87 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 16 | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 646 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | OPTOELECTRONIC DEVICES | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | BAND | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | EMISSIONS | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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