DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-03-31T12:43:09Z | - |
dc.date.available | 2016-03-31T12:43:09Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-12-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2003-OAK-0000003825 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18245 | - |
dc.description.abstract | Electrical properties of Pt/AlxGa1-xN Schottky diodes and chemical bonding states of AlxGa1-xN surface were examined simultaneously to investigate the change in the current transport mechanisms of the Pt/AlxGa1-xN diodes with increasing Al mole fraction. The Pt/GaN diodes showed electrical properties given by the thermionic-emission theory, while the Pt/Al0.35Ga0.65N showed a nonideal Schottky behavior. The oxygen donors were predominantly incorporated at the surface of AlxGa1-xN with increasing Al mole fraction, causing the surface to be heavily doped n type. Consequently, the current transport in the Pt/Al0.35Ga0.65N diodes was dominated by the field emission of electrons through the Schottky barrier, leading to the nonideal Schottky behavior. (C) 2003 American Institute of Physics. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.title | Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodes | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1063/1.1625101 | - |
dc.author.google | Kim, JK | - |
dc.author.google | Jang, HW | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 94 | - |
dc.relation.issue | 11 | - |
dc.relation.startpage | 7201 | - |
dc.relation.lastpage | 7205 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.94, no.11, pp.7201 - 7205 | - |
dc.identifier.wosid | 000186492600030 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 7205 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 7201 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 94 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0346962327 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 16 | - |
dc.description.scptc | 15 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | ALXGA1-XN | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.