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The characteristics of large area processing plasmas SCIE SCOPUS

Title
The characteristics of large area processing plasmas
Authors
Park, SECho, BULee, JKLee, YJYeom, GY
Date Issued
2003-08
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGI
Abstract
In order to, improve production efficiency, large-diameter wafer substrates (300-mm diameter) and large-are,a glass substrates (from 400 cm(2) to 1 m(2)) have been adopted recently. As a result, the development of large and high-density plasma source has become essential. To investigate the discharge phenomenon in the chamber that consists of embedded antenna coil in the rectangular system (1020 x 830 x 437 mm), we have developed a two-dimensional fluid simulation model. In order to check our model, the results from our simulation have been compared with available experimental data. The comparison is generally in a good agreement with experiments. Depending on the current direction and powered method, the distribution of plasma parameters has many differences. In our simulation with a chamber larger than is usually used in other experiments, we examine three effects: the distance between antenna coils, structure in the chamber, and the depth of the chamber. The parameters, which affect nonuniformity, electron temperature, and others, can be explained in a manner similar to the inductively coupled plasma source with a cylindrical chamber. Our simulation results confirm that the embedded antenna coil system with a suitable environment can be extended by many antenna coils as a. large-area plasma source.
Keywords
embedded antenna coil; inductively coupled plasma source; large-area plasma source; INDUCTIVELY-COUPLED PLASMA; 2-DIMENSIONAL FLUID MODEL; TRAVELING-WAVE DRIVEN; DISPLAY PANEL CELL; SIMULATION; UNIFORMITY
URI
https://oasis.postech.ac.kr/handle/2014.oak/18389
DOI
10.1109/TPS.2003.815247
ISSN
0093-3813
Article Type
Article
Citation
IEEE TRANSACTIONS ON PLASMA SCIENCE, vol. 31, no. 4, page. 628 - 637, 2003-08
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