The characteristics of large area processing plasmas
SCIE
SCOPUS
- Title
- The characteristics of large area processing plasmas
- Authors
- Park, SE; Cho, BU; Lee, JK; Lee, YJ; Yeom, GY
- Date Issued
- 2003-08
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- In order to, improve production efficiency, large-diameter wafer substrates (300-mm diameter) and large-are,a glass substrates (from 400 cm(2) to 1 m(2)) have been adopted recently. As a result, the development of large and high-density plasma source has become essential. To investigate the discharge phenomenon in the chamber that consists of embedded antenna coil in the rectangular system (1020 x 830 x 437 mm), we have developed a two-dimensional fluid simulation model. In order to check our model, the results from our simulation have been compared with available experimental data. The comparison is generally in a good agreement with experiments. Depending on the current direction and powered method, the distribution of plasma parameters has many differences. In our simulation with a chamber larger than is usually used in other experiments, we examine three effects: the distance between antenna coils, structure in the chamber, and the depth of the chamber. The parameters, which affect nonuniformity, electron temperature, and others, can be explained in a manner similar to the inductively coupled plasma source with a cylindrical chamber. Our simulation results confirm that the embedded antenna coil system with a suitable environment can be extended by many antenna coils as a. large-area plasma source.
- Keywords
- embedded antenna coil; inductively coupled plasma source; large-area plasma source; INDUCTIVELY-COUPLED PLASMA; 2-DIMENSIONAL FLUID MODEL; TRAVELING-WAVE DRIVEN; DISPLAY PANEL CELL; SIMULATION; UNIFORMITY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18389
- DOI
- 10.1109/TPS.2003.815247
- ISSN
- 0093-3813
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON PLASMA SCIENCE, vol. 31, no. 4, page. 628 - 637, 2003-08
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