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dc.contributor.authorKim, JY-
dc.contributor.authorLee, J-
dc.contributor.authorKim, J-
dc.contributor.authorKang, BK-
dc.contributor.authorKwon, O-
dc.date.accessioned2016-03-31T12:49:50Z-
dc.date.available2016-03-31T12:49:50Z-
dc.date.created2009-02-28-
dc.date.issued2003-06-23-
dc.identifier.issn0003-6951-
dc.identifier.other2003-OAK-0000003457-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/18497-
dc.description.abstractThe effect of surface treatment on leakage current is investigated for two structures of the electropumped GaAs/AlGaAs laser microcavities, one with mesa and the other with hyperboloid-drum structures. Using surface sheet resistivity as a figure-of-merit parameter, the results of different surface treatment methods are compared. The best result is obtained when the sample has been polished in a H2SO4:H2O2:H2O=1:8:1000 solution for 5 s, and treated subsequently in a 6% excess sulfur-containing (NH4)(2)S-x solution at 60 degreesC for 8 mins. The treatment in (NH4)(2)S-x solution increases the surface sheet resistivity by a factor of similar to14. The cross-sectional shape of the cavity and the vertical profile of distributed Bragg reflector mirrors have little correlation with the leakage current. (C) 2003 American Institute of Physics.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.titleEffect of surface treatment on leakage current of GaAs/AlGaAs laser microcavities-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1063/1.1584784-
dc.author.googleKim, JY-
dc.author.googleLee, J-
dc.author.googleKim, J-
dc.author.googleKang, BK-
dc.author.googleKwon, O-
dc.relation.volume82-
dc.relation.issue25-
dc.relation.startpage4504-
dc.relation.lastpage4506-
dc.contributor.id10123978-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.82, no.25, pp.4504 - 4506-
dc.identifier.wosid000183557300032-
dc.date.tcdate2019-01-01-
dc.citation.endPage4506-
dc.citation.number25-
dc.citation.startPage4504-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume82-
dc.contributor.affiliatedAuthorKang, BK-
dc.contributor.affiliatedAuthorKwon, O-
dc.identifier.scopusid2-s2.0-0038044800-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc13-
dc.description.scptc14*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusPHOTONIC QUANTUM-RING-
dc.subject.keywordPlusGAAS-SURFACES-
dc.subject.keywordPlusPASSIVATION-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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강봉구KANG, BONG KOO
Dept of Electrical Enginrg
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