DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, YG | - |
dc.contributor.author | Cha, J | - |
dc.contributor.author | Shin, B | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-03-31T12:52:25Z | - |
dc.date.available | 2016-03-31T12:52:25Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-03 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.other | 2003-OAK-0000003314 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18595 | - |
dc.description.abstract | This paper presents a new fully matched N-way Doherty amplifier. The basic principles of operation and important features are described. For the experimental verification, 2.14-GHz Doherty amplifiers,having two-, three-, and four-way structures are implemented using silicon LDMOSFETs and tested using down-link WCDMA signal. The linearity performances of the two-, three-, and four-way Doherty amplifiers are optimized for better efficiency versus linearity by a bias adjustment of the peaking amplifiers. For, simultaneously improving the efficiency and linearity to achieve maximum efficiency versus linearity, the gate biases of the peaking amplifiers for the N-way Doherty amplifier are optimized. As a result, the efficiency versus linearity characteristics are drastically improved by N-way extension of the Doherty amplifier. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.subject | adjacent channel leakage ratio (ACLR) | - |
dc.subject | efficiency | - |
dc.subject | linearity | - |
dc.subject | microwave Doherty amplifier | - |
dc.subject | power amplifiers | - |
dc.subject | WCDMA | - |
dc.subject | HIGH-EFFICIENCY | - |
dc.title | A fully matched N-way Doherty amplifier with optimized linearity | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/TMTT.2003.808713 | - |
dc.author.google | Yang, YG | - |
dc.author.google | Cha, J | - |
dc.author.google | Shin, B | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 51 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 986 | - |
dc.relation.lastpage | 993 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.51, no.3, pp.986 - 993 | - |
dc.identifier.wosid | 000182000700041 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 993 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 986 | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 51 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-0037358455 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 138 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | adjacent channel leakage ratio (ACLR) | - |
dc.subject.keywordAuthor | efficiency | - |
dc.subject.keywordAuthor | linearity | - |
dc.subject.keywordAuthor | microwave Doherty amplifier | - |
dc.subject.keywordAuthor | power amplifiers | - |
dc.subject.keywordAuthor | WCDMA | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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