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Cited 173 time in webofscience Cited 202 time in scopus
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dc.contributor.authorYang, YG-
dc.contributor.authorCha, J-
dc.contributor.authorShin, B-
dc.contributor.authorKim, B-
dc.date.accessioned2016-03-31T12:52:25Z-
dc.date.available2016-03-31T12:52:25Z-
dc.date.created2009-02-28-
dc.date.issued2003-03-
dc.identifier.issn0018-9480-
dc.identifier.other2003-OAK-0000003314-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/18595-
dc.description.abstractThis paper presents a new fully matched N-way Doherty amplifier. The basic principles of operation and important features are described. For the experimental verification, 2.14-GHz Doherty amplifiers,having two-, three-, and four-way structures are implemented using silicon LDMOSFETs and tested using down-link WCDMA signal. The linearity performances of the two-, three-, and four-way Doherty amplifiers are optimized for better efficiency versus linearity by a bias adjustment of the peaking amplifiers. For, simultaneously improving the efficiency and linearity to achieve maximum efficiency versus linearity, the gate biases of the peaking amplifiers for the N-way Doherty amplifier are optimized. As a result, the efficiency versus linearity characteristics are drastically improved by N-way extension of the Doherty amplifier.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGI-
dc.relation.isPartOfIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES-
dc.subjectadjacent channel leakage ratio (ACLR)-
dc.subjectefficiency-
dc.subjectlinearity-
dc.subjectmicrowave Doherty amplifier-
dc.subjectpower amplifiers-
dc.subjectWCDMA-
dc.subjectHIGH-EFFICIENCY-
dc.titleA fully matched N-way Doherty amplifier with optimized linearity-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1109/TMTT.2003.808713-
dc.author.googleYang, YG-
dc.author.googleCha, J-
dc.author.googleShin, B-
dc.author.googleKim, B-
dc.relation.volume51-
dc.relation.issue3-
dc.relation.startpage986-
dc.relation.lastpage993-
dc.contributor.id10106173-
dc.relation.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.51, no.3, pp.986 - 993-
dc.identifier.wosid000182000700041-
dc.date.tcdate2019-01-01-
dc.citation.endPage993-
dc.citation.number3-
dc.citation.startPage986-
dc.citation.titleIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES-
dc.citation.volume51-
dc.contributor.affiliatedAuthorKim, B-
dc.identifier.scopusid2-s2.0-0037358455-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc138-
dc.type.docTypeArticle-
dc.subject.keywordAuthoradjacent channel leakage ratio (ACLR)-
dc.subject.keywordAuthorefficiency-
dc.subject.keywordAuthorlinearity-
dc.subject.keywordAuthormicrowave Doherty amplifier-
dc.subject.keywordAuthorpower amplifiers-
dc.subject.keywordAuthorWCDMA-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-

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김범만KIM, BUM MAN
Dept of Electrical Enginrg
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