DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, S | - |
dc.contributor.author | Choi, B | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-03-31T12:52:26Z | - |
dc.date.available | 2016-03-31T12:52:26Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-03 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.other | 2003-OAK-0000003313 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18596 | - |
dc.description.abstract | The linearity of CMOS has been analyzed using the Taylor series. Transconductance and output conductance are two dominant nonlinear sources of CMOS. At a low frequency, the transconductance is a dominant nonlinear source for a low load impedance, but for a usual operation level impedance the output conductance is a dominant nonlinear source. Capacitances and the substrate network do not generate any significant nonlinearity, but they suppress output-conductance nonlinearity at a high frequency because output impedance is reduced by the capacitive shunts, and output voltage swing is also reduced. Therefore, above 2-3 GHz, the transconductance becomes a dominant nonlinear source for a usual load impedance. If these capacitive elements are tuned out for a power match, the behavior becomes similar to the low-frequency case. As gate length is reduced, the transconductance becomes more linear, but the output conductance becomes more nonlinear. At a low frequency, CMOS linearity is degraded as the gate length becomes shorter, but at a higher frequency (above 2-3 GHz), linearity can be improved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.subject | CMOS | - |
dc.subject | linearity | - |
dc.title | Linearity analysis of CMOS for RF application | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/TMTT.2003.808709 | - |
dc.author.google | Kang, S | - |
dc.author.google | Choi, B | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 51 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 972 | - |
dc.relation.lastpage | 977 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.51, no.3, pp.972 - 977 | - |
dc.identifier.wosid | 000182000700039 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 977 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 972 | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 51 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-0037361403 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 70 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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