간섭 리소그래피를 이요한 균일한 나노 구조의 제작과 응용

Abstract

In this study, a method of fabrication of uniform nano structure by using laser interference lithography is presented. There are some factors affecting uniformity of the nano pattern such as beam distribution, sinusoidal intensity interference pattern and control of development. Beam distribution and sinusoidal intensity interference pattern are determined by what laser is used. In this study, I use an AlInGaN semiconductor laser which has long coherence length for large area and is cheaper than other lasers usually used for interference lithography. Also another important thing to make uniform nano structure is control of development. I modified development method to uniformly distribute developer all over sample area, which results in uniform nano structure over the whole sample area.