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Cited 67 time in webofscience Cited 73 time in scopus
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dc.contributor.authorBaik, JM-
dc.contributor.authorJang, HW-
dc.contributor.authorKim, JK-
dc.contributor.authorLee, JL-
dc.date.accessioned2016-03-31T12:55:55Z-
dc.date.available2016-03-31T12:55:55Z-
dc.date.created2009-02-28-
dc.date.issued2003-01-27-
dc.identifier.issn0003-6951-
dc.identifier.other2003-OAK-0000003147-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/18726-
dc.description.abstractA dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent annealing. The ferromagnetic property was obtained after annealing at 800 degreesC. This was attributed to the formation of Ga-Mn magnetic phases. Higher temperature annealing at 900 degreesC reduced the ferromagnetic signal and produced antiferromagnetic Mn-N compounds such as Mn6N2.58 and Mn3N2, leaving N vacancies. This provides evidence that N vacancies play a critical role in weakening the ferromagnetic property in the Mn-implanted GaN. (C) 2003 American Institute of Physics.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.titleEffect of microstructural change on magnetic property of Mn-implanted p-type GaN-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1063/1.1541111-
dc.author.googleBaik, JM-
dc.author.googleJang, HW-
dc.author.googleKim, JK-
dc.author.googleLee, JL-
dc.relation.volume82-
dc.relation.issue4-
dc.relation.startpage583-
dc.relation.lastpage585-
dc.contributor.id10105416-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.82, no.4, pp.583 - 585-
dc.identifier.wosid000180564000033-
dc.date.tcdate2019-01-01-
dc.citation.endPage585-
dc.citation.number4-
dc.citation.startPage583-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume82-
dc.contributor.affiliatedAuthorKim, JK-
dc.contributor.affiliatedAuthorLee, JL-
dc.identifier.scopusid2-s2.0-0037468076-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc64-
dc.description.scptc68*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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