DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Lee, JL | - |
dc.contributor.author | Schroeder, J | - |
dc.contributor.author | S | - |
dc.contributor.author | s, T | - |
dc.date.accessioned | 2016-03-31T12:55:57Z | - |
dc.date.available | 2016-03-31T12:55:57Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-01-27 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2003-OAK-0000003146 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18727 | - |
dc.description.abstract | The electrical properties of metal contacts on laser-irradiated n-type GaN were investigated using synchrotron radiation photoemission spectroscopy. A KrF excimer laser pulse of 600 mJ/cm(2) onto GaN led to a decrease in the Ni Schottky barrier height from 0.91 to 0.47 eV, resulting in the formation of a nonalloyed Ohmic contact with a specific contact resistivity of 1.7x10(-6) Omega cm(2). Metallic Ga decomposed from GaN by laser irradiation was transformed into GaOx, playing a role in promoting outdiffusion of N atoms. A large number of N vacancies were produced, forming a degenerated GaN layer near the surface, resulting in the good Ohmic contact. (C) 2003 American Institute of Physics. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.title | Electrical properties of metal contacts on laser-irradiated n-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1063/1.1537515 | - |
dc.author.google | Jang, HW | - |
dc.author.google | Kim, JK | - |
dc.author.google | Lee, JL | - |
dc.author.google | Schroeder, J | - |
dc.author.google | Sands, T | - |
dc.relation.volume | 82 | - |
dc.relation.issue | 4 | - |
dc.relation.startpage | 580 | - |
dc.relation.lastpage | 582 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.82, no.4, pp.580 - 582 | - |
dc.identifier.wosid | 000180564000032 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 582 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 580 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 82 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0037467964 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 18 | - |
dc.description.scptc | 18 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | LIFT-OFF | - |
dc.subject.keywordPlus | OHMIC CONTACT | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | DAMAGE | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | MG | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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