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Cited 19 time in webofscience Cited 20 time in scopus
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dc.contributor.authorPark, WI-
dc.contributor.authorJung, SW-
dc.contributor.authorYi, GC-
dc.contributor.authorOh, SH-
dc.contributor.authorPark, CG-
dc.contributor.authorKim, M-
dc.date.accessioned2016-03-31T12:57:21Z-
dc.date.available2016-03-31T12:57:21Z-
dc.date.created2009-02-28-
dc.date.issued2002-11-01-
dc.identifier.issn0021-4922-
dc.identifier.other2003-OAK-0000003066-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/18780-
dc.description.abstractWe report on metal-semiconductor heterostructure nanorods with an abrupt interface. The metal-semiconductor nanorods were fabricated simply by evaporating metal on vertically aligned ZnO nanorods. Before the fabrication of heterostructure nanorods, the ZnO nanorods were prepared by metalorganic vapor phase epitaxy. Since no metal catalyst is employed during the nanorod growth, the nanorods do not exhibit any metal clusters on their tips. When metal is evaporated on the vertically aligned nanorods, metal is deposited mainly on the tips of the nanorods. Transmission electron microscopy revealed that the Au-coated ZnO heterostructure nanorods exhibit an atomically sharp interface between ZnO and Au.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherINST PURE APPLIED PHYSICS-
dc.relation.isPartOfJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS-
dc.subjectZnO-
dc.subjectnanorods-
dc.subjectmetal-semiconductor heterostructure-
dc.subjectmetalorganic vapor phase epitaxy (MOVPE)-
dc.subjectnon-catalytic growth-
dc.subjectCARBON NANOTUBE-
dc.subjectNANOWIRES-
dc.titleMetal-ZnO heterostructure nanorods with an abrupt interface-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1143/JJAP.41.L120-
dc.author.googlePark, WI-
dc.author.googleJung, SW-
dc.author.googleYi, GC-
dc.author.googleOh, SH-
dc.author.googlePark, CG-
dc.author.googleKim, M-
dc.relation.volume41-
dc.relation.issue11A-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.41, no.11A, pp.L1206 - L1208-
dc.identifier.wosid000179894000006-
dc.date.tcdate2019-01-01-
dc.citation.endPageL1208-
dc.citation.number11A-
dc.citation.startPageL1206-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS-
dc.citation.volume41-
dc.contributor.affiliatedAuthorYi, GC-
dc.contributor.affiliatedAuthorPark, CG-
dc.identifier.scopusid2-s2.0-0036868629-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc17-
dc.type.docTypeArticle-
dc.subject.keywordAuthorZnO-
dc.subject.keywordAuthornanorods-
dc.subject.keywordAuthormetal-semiconductor heterostructure-
dc.subject.keywordAuthormetalorganic vapor phase epitaxy (MOVPE)-
dc.subject.keywordAuthornon-catalytic growth-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
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