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A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu SCIE SCOPUS

Title
A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu
Authors
Han, SJSong, JWYang, CHPark, SHPark, JHJeong, YHRhie, KW
Date Issued
2002-11-25
Publisher
AMER INST PHYSICS
Abstract
Successful synthesis of room-temperature ferromagnetic semiconductors, Zn1-xFexO, is reported. The essential ingredient in achieving room-temperature ferromagnetism in bulk Zn1-xFexO was found to be additional Cu doping. A transition temperature as high as 550 K was obtained in Zn0.94Fe0.05Cu0.01O; the saturation magnetization at room temperature reached a value of 0.75mu(B) per Fe. A large magnetoresistance was also observed below 100 K. (C) 2002 American Institute of Physics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/18820
DOI
10.1063/1.1525885
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 81, no. 22, page. 4212 - 4214, 2002-11-25
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