DC Field | Value | Language |
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dc.contributor.author | Kim, W | - |
dc.contributor.author | Kang, S | - |
dc.contributor.author | Lee, K | - |
dc.contributor.author | Chung, M | - |
dc.contributor.author | Kang, J | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-03-31T13:04:14Z | - |
dc.date.available | 2016-03-31T13:04:14Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2002-07 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.other | 2002-OAK-0000002756 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19002 | - |
dc.description.abstract | To accurately understand the linear characteristics of a heterojunction bipolar transistor (HBT), we developed an analytical nonlinear HBT model using Volterra-series analysis. The model considers four nonlinear components: r(pi), C-diff, C-dep1, and g(m). It shows that nonlinearities of r(pi) and C-diff are almost completely canceled by g(m) nonlinearity at all frequencies. The residual g, nonlinearity is highly degenerated by input circuit impedances. Therefore, r(pi), C-diff, C-dep1, and g(m) nonlinearities generate less harmonics than C-bc nonlinearity. If C-bc is linearized, g(m) is the main nonlinear source of HBT, and C-dep1 becomes very important at a high frequency. The degeneration resistor RE is more effective than R-B for reducing g(m) nonlinearity. This analysis also shows the dependency of the third-order intermodulation (IM3) on the terminations of the source second harmonic impedances. The IM3 of HBT is significantly reduced by setting the second harmonic impedances of Z(S), 2omega(2) = 0 and Z(S), omega(2)-omega(1) = 0. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.subject | heterojunction bipolar transistors | - |
dc.subject | intermodulation distortion | - |
dc.subject | nonlinearity | - |
dc.subject | HETEROJUNCTION BIPOLAR-TRANSISTORS | - |
dc.subject | ALGAAS/GAAS HBTS | - |
dc.subject | LINEARITY | - |
dc.subject | INTERMODULATION | - |
dc.subject | DISTORTION | - |
dc.subject | DESIGN | - |
dc.title | Analysis of nonlinear behavior of power HBTs | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/TMTT.2002.800396 | - |
dc.author.google | Kim, W | - |
dc.author.google | Kang, S | - |
dc.author.google | Lee, K | - |
dc.author.google | Chung, M | - |
dc.author.google | Kang, J | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 50 | - |
dc.relation.issue | 7 | - |
dc.relation.startpage | 1714 | - |
dc.relation.lastpage | 1722 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.50, no.7, pp.1714 - 1722 | - |
dc.identifier.wosid | 000176749900008 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1722 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1714 | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 50 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-0036647115 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 35 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HETEROJUNCTION BIPOLAR-TRANSISTORS | - |
dc.subject.keywordPlus | ALGAAS/GAAS HBTS | - |
dc.subject.keywordPlus | LINEARITY | - |
dc.subject.keywordPlus | INTERMODULATION | - |
dc.subject.keywordPlus | DISTORTION | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordAuthor | heterojunction bipolar transistors | - |
dc.subject.keywordAuthor | intermodulation distortion | - |
dc.subject.keywordAuthor | nonlinearity | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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