Characterization of buried ultrathin layer and multilayer system by X-ray scattering

Abstract

We examine the interfacial layer and the height correlation function of the defective semiconductor thin SnO2 film on the sapphire and Mo/Si multilayer by X-ray reflectivity measurements. We focus on how to estimate the quality of the interfaces in the thin films quickly. In particular, it is easily found that for the SnO2 thin film, an ultrathin layer exists between the SnO2 film and the sapphire substrate, and for the Mo/Si multilayer, a silicide layer exists between each Mo/Si layer.