Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors
SCIE
SCOPUS
- Title
- Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors
- Authors
- Choi, KJ; Moon, JK; Park, M; Kim, HC; Lee, JL
- Date Issued
- 2002-05
- Publisher
- INST PURE APPLIED PHYSICS
- Abstract
- Effects of photowashing treatment on gate leakage current (I-GD) of a GaAs metal-semiconductor field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of GaAs through X-ray photoemission spectroscopy. The photowashing treatment produces Ga2O3 on the surface of GaAs, leaving acceptor-type Ga antisites behind under the oxide. The Ga antisites played a role in reducing the maximum electric field at the drain edge of the gate, leading to the decrease of I-GD. The longer photowashing time produced thicker oxide on the surface of GaAs, acting as a conducting pass for electrons, leading to the increase of I-GD.
- Keywords
- photowashing; leakage current; field-effect transistor; band bending; X-ray photoemission spectroscopy; Ga antisites; SURFACE; MESFET; MODEL
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19013
- DOI
- 10.1143/JJAP.41.2894
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 41, no. 5A, page. 2894 - 2899, 2002-05
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