DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yi, C | - |
dc.contributor.author | Kim, HU | - |
dc.contributor.author | Rhee, SW | - |
dc.contributor.author | Oh, SH | - |
dc.contributor.author | Park, CG | - |
dc.date.accessioned | 2016-03-31T13:10:45Z | - |
dc.date.available | 2016-03-31T13:10:45Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-11 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.other | 2002-OAK-0000002414 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19245 | - |
dc.description.abstract | We studied two-step deposition with an O-2/He intermediate plasma treatment to improve the SiO2/Si interface characteristics. Using this method, we can minimize the plasma damage on the Si surface and improve the interface characteristics such as intermediate oxidation states, interface trap density D-it, and V-fb shift. The interface characteristics were improved with the intermediate plasma treatment after a 6 nm first oxide deposition. The number of Si atoms (N-SiOx) in the suboxide region, compared with the sample without plasma treatment, was decreased 14.7% and a sixfold ring structure became dominant. Interface trap density was decreased from 1.65 X 10(11)/eV cm(2) to 6.87 X 10(10)/eV cm(2) by the oxygen incorporation in the transition region. The moderate oxygen incorporation near the SiO2/Si interface reduced the V-fb shift due to the decrease of the fixed oxide charge. (C) 2001 American Vacuum Society. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.title | Improvement of the SiO2/Si interface characteristics by two-step deposition with intermediate plasma treatment using O-2/He gas | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1116/1.1412657 | - |
dc.author.google | Yi, C | - |
dc.author.google | Kim, HU | - |
dc.author.google | Rhee, SW | - |
dc.author.google | Oh, SH | - |
dc.author.google | Park, CG | - |
dc.relation.volume | 19 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 2067 | - |
dc.relation.lastpage | 2072 | - |
dc.contributor.id | 10069857 | - |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.19, no.6, pp.2067 - 2072 | - |
dc.identifier.wosid | 000173159900010 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2072 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2067 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 19 | - |
dc.contributor.affiliatedAuthor | Rhee, SW | - |
dc.contributor.affiliatedAuthor | Park, CG | - |
dc.identifier.scopusid | 2-s2.0-0035519105 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | SI/SIO2 INTERFACES | - |
dc.subject.keywordPlus | SI-SIO2 INTERFACES | - |
dc.subject.keywordPlus | CHLORINE ADDITION | - |
dc.subject.keywordPlus | X-RAY | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | NITROGEN | - |
dc.subject.keywordPlus | DIOXIDE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
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