DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yi, GC | - |
dc.contributor.author | Park, WI | - |
dc.date.accessioned | 2016-03-31T13:11:50Z | - |
dc.date.available | 2016-03-31T13:11:50Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-11 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2001-OAK-0000002357 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19286 | - |
dc.description.abstract | The defect structure for unintentionally doped and deliberately Se-doped, n-type GaN was investigated, For impurity doping, Se was incorporated into GaN films during vapor phase epitaxial growth. Both nominally undoped and Se-doped. n-type GaN films were highly compensated as determined by the Hall effect measurements and photoluminescence spectroscopy. It was also found that the compensation by acceptors increases with increasing Se doping concentration. Based upon these experiments and the theoretical calculations, a defect compensation model for n-type GaN was developed. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.subject | Se-doped GaN | - |
dc.subject | defect | - |
dc.subject | compensation model | - |
dc.subject | Hall effect | - |
dc.subject | photoluminescence | - |
dc.subject | NATIVE DEFECTS | - |
dc.subject | DOPED GAN | - |
dc.subject | VACANCIES | - |
dc.subject | DONORS | - |
dc.subject | MG | - |
dc.title | Compensation model for n-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1143/JJAP.40.6243 | - |
dc.author.google | Yi, GC | - |
dc.author.google | Park, WI | - |
dc.relation.volume | 40 | - |
dc.relation.issue | 11 | - |
dc.relation.startpage | 6243 | - |
dc.relation.lastpage | 6247 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.40, no.11, pp.6243 - 6247 | - |
dc.identifier.wosid | 000172454500014 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 6247 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 6243 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.citation.volume | 40 | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | NATIVE DEFECTS | - |
dc.subject.keywordPlus | DOPED GAN | - |
dc.subject.keywordPlus | VACANCIES | - |
dc.subject.keywordPlus | DONORS | - |
dc.subject.keywordPlus | MG | - |
dc.subject.keywordAuthor | Se-doped GaN | - |
dc.subject.keywordAuthor | defect | - |
dc.subject.keywordAuthor | compensation model | - |
dc.subject.keywordAuthor | Hall effect | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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