DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, W | - |
dc.contributor.author | Lee, KH | - |
dc.contributor.author | Chung, MC | - |
dc.contributor.author | Kang, JC | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-03-31T13:13:41Z | - |
dc.date.available | 2016-03-31T13:13:41Z | - |
dc.date.created | 2009-03-18 | - |
dc.date.issued | 2001-09-27 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.other | 2001-OAK-0000002260 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19354 | - |
dc.description.abstract | A new layout for high-speed AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is presented. The layout is horseshoe shaped and designed to simultaneously reduce base resistance (R-B) and base-collector capacitance (C-BC). A horseshoe-shaped HBT and a conventional single-finger HBT with the same emitter, width of 2 mum were fabricated and tested. The reduction of R-B and C-BC using the horseshoe-shaped HBT resulted in a 25% improvement of the maximum oscillation frequency (f(max) = 130 GHz). | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEE-INST ELEC ENG | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.title | High-speed AlGaAs/GaAs HBTs with reduced base-collector capacitance | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1049/el:20010835 | - |
dc.author.google | Kim, W | - |
dc.author.google | Lee, KH | - |
dc.author.google | Chung, MC | - |
dc.author.google | Kang, JC | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 37 | - |
dc.relation.issue | 20 | - |
dc.relation.startpage | 1259 | - |
dc.relation.lastpage | 1261 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | ELECTRONICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.37, no.20, pp.1259 - 1261 | - |
dc.identifier.wosid | 000171565000036 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1261 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 1259 | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 37 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-0035959803 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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