DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, DH | - |
dc.contributor.author | Ko, DH | - |
dc.contributor.author | Ku, JH | - |
dc.contributor.author | Choi, S | - |
dc.contributor.author | Fujihara, K | - |
dc.contributor.author | Kang, HK | - |
dc.contributor.author | Oh, SH | - |
dc.contributor.author | Park, CG | - |
dc.contributor.author | Lee, HJ | - |
dc.date.accessioned | 2016-03-31T13:15:30Z | - |
dc.date.available | 2016-03-31T13:15:30Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-04 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2001-OAK-0000002162 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19422 | - |
dc.description.abstract | We investigated the formation and thermal stability of Co-silicide films using Co-Ta alloy films on (100) Si substrates. Co-Ta alloy films were deposited by direct current (DC) magnetron sputtering using Co and Ta targets. The content of Ta in the films was controlled at 8 at.%. The Co-silicide films were formed through a rapid thermal annealing (RTA) process in N-2 ambient. Compared with the Co/Si systems, the formation Of CoSi2 occurs at higher temperatures in Co0.92Ta0.08/Si systems. X-Ray diffractometry (XRD) analyses showed the presence of strong (200)-preferred orientation in the Co-silicide films formed from Co0.92Ta0.08/Si systems. We observed that Co-silicide films formed from Co0.92Ta0.08/Si systems maintained low sheet resistance values upon annealing at 950 degreesC, while those of Co-silicide from Co/Si systems increased significantly. The improvement of the thermal stability of the Co-silicide films from Co0.92Ta0.08/Si systems is due to the formation of Ta-compounds such as the TaSi2 phase at the grain boundaries or at the surface of the CoSi2 films. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.subject | Co-Ta alloy | - |
dc.subject | Co0.92Ta0.08/Si | - |
dc.subject | agglomeration | - |
dc.subject | Co-silicide | - |
dc.subject | thermal stability | - |
dc.subject | CoSi2 | - |
dc.subject | EPITAXIAL COSI2 | - |
dc.subject | POLYCRYSTALLINE SILICON | - |
dc.subject | THERMAL-STABILITY | - |
dc.subject | BILAYER | - |
dc.subject | OXIDE | - |
dc.subject | ALLOY | - |
dc.subject | THICKNESS | - |
dc.subject | BARRIER | - |
dc.subject | GROWTH | - |
dc.subject | FILMS | - |
dc.title | Formation of high-temperature stable Co-silicide from Co0.92Ta0.08/Si systems | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1143/JJAP.40.2712 | - |
dc.author.google | Lee, DH | - |
dc.author.google | Ko, DH | - |
dc.author.google | Ku, JH | - |
dc.author.google | Choi, S | - |
dc.author.google | Fujihara, K | - |
dc.author.google | Kang, HK | - |
dc.author.google | Oh, SH | - |
dc.author.google | Park, CG | - |
dc.author.google | Lee, HJ | - |
dc.relation.volume | 40 | - |
dc.relation.issue | 4B | - |
dc.relation.startpage | 2712 | - |
dc.relation.lastpage | 2716 | - |
dc.contributor.id | 10069857 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.40, no.4B, pp.2712 - 2716 | - |
dc.identifier.wosid | 000170771900027 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2716 | - |
dc.citation.number | 4B | - |
dc.citation.startPage | 2712 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.citation.volume | 40 | - |
dc.contributor.affiliatedAuthor | Park, CG | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | EPITAXIAL COSI2 | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | BILAYER | - |
dc.subject.keywordPlus | ALLOY | - |
dc.subject.keywordPlus | BARRIER | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | Co-Ta alloy | - |
dc.subject.keywordAuthor | Co0.92Ta0.08/Si | - |
dc.subject.keywordAuthor | agglomeration | - |
dc.subject.keywordAuthor | Co-silicide | - |
dc.subject.keywordAuthor | thermal stability | - |
dc.subject.keywordAuthor | CoSi2 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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