Fabrication of an X-band amplifier using a multilayer process

Abstract

A multilayer process based on polyimide has been developed, and a passive component library for the process has been established. A two-stage amplifier using these passive components has been designed and fabricated. For the design, three layers of polyimide were used for capacitors and microstrip lines. The reactive ion etching: process for via-hole connection through polyimide was used. The main circuit was fabricated on the top layer. The fabricated amplifier showed a gain of 11.5 dB at 8.5 GHz. Also the chip size is considerably reduced in size because of the multilayer structure.