DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, CC | - |
dc.contributor.author | Je, JH | - |
dc.contributor.author | Kim, DW | - |
dc.contributor.author | Baik, HK | - |
dc.contributor.author | Lee, SM | - |
dc.contributor.author | Ruterana, P | - |
dc.date.accessioned | 2016-03-31T13:18:51Z | - |
dc.date.available | 2016-03-31T13:18:51Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-05-22 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.other | 2001-OAK-0000001991 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19547 | - |
dc.description.abstract | We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga,Pd, and Ga,Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.relation.isPartOf | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.subject | Pd | - |
dc.subject | gallide | - |
dc.subject | microstructure | - |
dc.subject | interfacial structure | - |
dc.subject | epitaxy | - |
dc.subject | GAN | - |
dc.subject | CONTACT | - |
dc.subject | PD | - |
dc.title | Annealing behavior of Pd/GaN (0001) microstructure | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1016/S0921-5107(00)00761-3 | - |
dc.author.google | Kim, CC | - |
dc.author.google | Je, JH | - |
dc.author.google | Kim, DW | - |
dc.author.google | Baik, HK | - |
dc.author.google | Lee, SM | - |
dc.author.google | Ruterana, P | - |
dc.relation.volume | 82 | - |
dc.relation.issue | 1-3 | - |
dc.relation.startpage | 105 | - |
dc.relation.lastpage | 107 | - |
dc.contributor.id | 10123980 | - |
dc.relation.journal | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.82, no.1-3, pp.105 - 107 | - |
dc.identifier.wosid | 000168618700031 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 107 | - |
dc.citation.number | 1-3 | - |
dc.citation.startPage | 105 | - |
dc.citation.title | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.volume | 82 | - |
dc.contributor.affiliatedAuthor | Je, JH | - |
dc.identifier.scopusid | 2-s2.0-0035933098 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 10 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordPlus | PD | - |
dc.subject.keywordAuthor | Pd | - |
dc.subject.keywordAuthor | gallide | - |
dc.subject.keywordAuthor | microstructure | - |
dc.subject.keywordAuthor | interfacial structure | - |
dc.subject.keywordAuthor | epitaxy | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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