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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sohn, YJ | - |
| dc.contributor.author | Lee, BH | - |
| dc.contributor.author | Jeong, MY | - |
| dc.contributor.author | Jeong, YH | - |
| dc.date.accessioned | 2016-03-31T13:21:10Z | - |
| dc.date.available | 2016-03-31T13:21:10Z | - |
| dc.date.created | 2009-08-05 | - |
| dc.date.issued | 2001-03-01 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.other | 2001-OAK-0000001864 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19632 | - |
| dc.description.abstract | Enhancement mode Al0.25Ga0.75As/In0.2Ga0.8As nanowire high electron mobility transistors (NW-HEMTs) are fabricated successfully by using selective wet etching and the depletion characteristic of a Schottky wrap gate (WPG). The devices exhibit very good modulation and saturation characteristics. For an NW-HEMT with an estimated channel width of 250nm, the maximum transconductance is similar to 450mS/mm at a drain voltage of 1.5V. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | IEE-INST ELEC ENG | - |
| dc.relation.isPartOf | ELECTRONICS LETTERS | - |
| dc.title | Enhancement mode Al0.25Ga0.75As/In0.2Ga0.8As nanowire HEMTs | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | - |
| dc.identifier.doi | 10.1049/el:20010208 | - |
| dc.author.google | Sohn, YJ | - |
| dc.author.google | Lee, BH | - |
| dc.author.google | Jeong, MY | - |
| dc.author.google | Jeong, YH | - |
| dc.relation.volume | 37 | - |
| dc.relation.issue | 5 | - |
| dc.relation.startpage | 322 | - |
| dc.relation.lastpage | 323 | - |
| dc.contributor.id | 10106021 | - |
| dc.relation.journal | ELECTRONICS LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.37, no.5, pp.322 - 323 | - |
| dc.identifier.wosid | 000167498800040 | - |
| dc.date.tcdate | 2018-03-23 | - |
| dc.citation.endPage | 323 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 322 | - |
| dc.citation.title | ELECTRONICS LETTERS | - |
| dc.citation.volume | 37 | - |
| dc.contributor.affiliatedAuthor | Jeong, YH | - |
| dc.identifier.scopusid | 2-s2.0-0035279361 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.type.docType | Article | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg