Structural evolution of ZnO/sapphire(001) heteroepitaxy studied by real time synchrotron x-ray scattering

Abstract

The structural evolution during heteroepitaxial growth of ZnO/sapphire(001) by radio-frequency magnetron sputtering has been studied using real-time synchrotron x-ray scattering. The two-dimensional (2D) ZnO(002) layers grown in the initial stage are highly strained and well aligned to the substrate having a mosaic distribution of 0.01 degrees full width at half maximum (FWHM), in sharp contrast to the reported transition 2D layers grown by molecular-beam epitaxy. With increasing film thickness, the lattice strain is relieved and the poorly aligned (1.25 degrees FWHM) three-dimensional (3D) islands are nucleated on the 2D layers. We attribute the 2D-3D transition to the release of the strain energy stored in the film due to the film/substrate lattice mismatch. (C) 2000 American Institute of Physics. [S0003-6951(00)01529-1].