Electronic structures of III-V based ferromagnetic semiconductors: half-metallic phase
SCIE
SCOPUS
- Title
- Electronic structures of III-V based ferromagnetic semiconductors: half-metallic phase
- Authors
- Park, JH; Kwon, SK; Min, BI
- Date Issued
- 2000-06
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Electronic structures of Ga1-xMnxAs (x = 0.063, 0.125) are investigated using the local density approximation (LDA) and LDA + U band calculations. Both the LDA and LDA + U yield the half-metallic ground states for (Ga0.938Mn0.063)As, but only the LDA + U electronic structures art: consistent with photoemission spectra. The states at the Fermi level are mainly of As 4p character, which mediates the RKKY-type magnetic intercation among Mn ions. (C) 2000 Elsevier Science B.V. All rights reserved.
- Keywords
- half-metal; magnetic semiconductors; electronic structure
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20044
- DOI
- 10.1016/S0921-4526(99)00984-9
- ISSN
- 0921-4526
- Article Type
- Article
- Citation
- PHYSICA B-CONDENSED MATTER, vol. 281, page. 703 - 704, 2000-06
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