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dc.contributor.authorJe, JH-
dc.contributor.authorKim, HK-
dc.contributor.authorNoh, DY-
dc.date.accessioned2016-03-31T13:38:33Z-
dc.date.available2016-03-31T13:38:33Z-
dc.date.created2009-02-28-
dc.date.issued1999-04-
dc.identifier.issn0884-2914-
dc.identifier.other1999-OAK-0000000921-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/20281-
dc.description.abstractThe microstructure of the amorphous, silicide, and crystalline Fe films grown on Si(001) substrates by a radio-frequency (rf) magnetron on sputtering was studied in synchrotron x-ray scattering experiments. During the growth, iron-silicide interlayers were always formed. The silicide interlayer became crystalline beta-FeSi2 at high rf power (less than or equal to 20 W/cm(2)) and at the substrate temperature of 100 degrees C, The formation of the beta-FeSi2 was also promoted by postannealing to 300 degrees C. The Fe films grown on top of the silicide interlayer were amorphous at low substrate temperatures (less than or equal to 100 degrees C), It became crystalline only at high substrate temperature (300 degrees C) with the low rf power of 2 W/cm(2). The crystalline Fe film was nonepitaxial but had the [111] preferred orientation.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherMATERIALS RESEARCH SOCIETY-
dc.relation.isPartOfJOURNAL OF MATERIALS RESEARCH-
dc.subjectX-RAY-SCATTERING-
dc.subjectPREFERRED ORIENTATION-
dc.subjectEPITAXIAL-GROWTH-
dc.subjectTHIN-FILMS-
dc.subjectBETA-FESI2-
dc.subjectHETEROEPITAXY-
dc.subjectENERGY-
dc.subjectSI(100)-
dc.subject(111)SI-
dc.titleAmorphous, silicide, and crystalline Fe films grown on Si(001) by radio-frequency magnetron sputtering-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1557/JMR.1999.0223-
dc.author.googleJE, JH-
dc.author.googleKIM, HK-
dc.author.googleNOH, DY-
dc.relation.volume14-
dc.relation.issue4-
dc.relation.startpage1658-
dc.relation.lastpage1663-
dc.contributor.id10123980-
dc.relation.journalJOURNAL OF MATERIALS RESEARCH-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS RESEARCH, v.14, no.4, pp.1658 - 1663-
dc.identifier.wosid000082550400069-
dc.date.tcdate2018-03-23-
dc.citation.endPage1663-
dc.citation.number4-
dc.citation.startPage1658-
dc.citation.titleJOURNAL OF MATERIALS RESEARCH-
dc.citation.volume14-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-0032626490-
dc.description.journalClass1-
dc.description.journalClass1-
dc.type.docTypeArticle-
dc.subject.keywordPlusX-RAY-SCATTERING-
dc.subject.keywordPlusPREFERRED ORIENTATION-
dc.subject.keywordPlusEPITAXIAL-GROWTH-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusBETA-FESI2-
dc.subject.keywordPlusHETEROEPITAXY-
dc.subject.keywordPlusENERGY-
dc.subject.keywordPlusSI(100)-
dc.subject.keywordPlus(111)SI-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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