Analytical model for dc drain current-voltage relationship in double-diffused channel of DMOS transistor
SCIE
SCOPUS
- Title
- Analytical model for dc drain current-voltage relationship in double-diffused channel of DMOS transistor
- Authors
- Kim, J; Kim, B
- Date Issued
- 1999-02
- Publisher
- IOP PUBLISHING LTD
- Abstract
- An analytical model for the de current-voltage relationship in a double-diffused channel with a lateral nonuniform doping profile of a DMOS transistor has been developed. The equations are similar forms to the current-voltage equations of a conventional MOS transistor. The velocity saturation effect and the mobility reduction effect caused by a perpendicular electric field are also included. The model was verified by comparison with the results of two-dimensional numerical simulation and the fabricated device with a good agreement. The proposed model in this paper can be very useful for designing and analysing power devices with a double-diffused channel structure.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20503
- DOI
- 10.1088/0268-1242/14/2/005
- ISSN
- 0268-1242
- Article Type
- Article
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 14, no. 2, page. 130 - 137, 1999-02
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.