DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, JH | - |
dc.contributor.author | Kim, JY | - |
dc.contributor.author | Chung, YJ | - |
dc.contributor.author | Lee, JW | - |
dc.contributor.author | Suh, YS | - |
dc.contributor.author | Ahn, KH | - |
dc.contributor.author | Kim, BM | - |
dc.date.accessioned | 2016-03-31T13:47:26Z | - |
dc.date.available | 2016-03-31T13:47:26Z | - |
dc.date.created | 2009-03-18 | - |
dc.date.issued | 1998-11 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.other | 1998-OAK-0000000490 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/20591 | - |
dc.description.abstract | To find dominant 1/f noise sources, generalized noise analyses have been performed for self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBT's). For shorted base-emitter condition, the resistance fluctuation 1/f noise is dominant, while for open base-emitter condition, the base-emitter current 1/f noise is dominant. The collector-emitter 1/f current noise, though generally considered an important noise source, is negligible. The resistance 1/f noise stems mainly from the emitter resistance fluctuation. Our noise-reduction works are focused on the reduction of the base-emitter current 1/f noise, We have investigated the base-emitter-current noise properties as a function of emitter-base structure and surface passivation condition. It is found that the surface-recombination 1/f noise can be significantly reduced by the heterojunction launcher of the abrupt junction with 30% aluminum mole fraction emitter. The depleted AlGaAs ledge surface passivation further suppresses the surface-recombination currents. Consequently, we have achieved a very low 1/f noise corner frequency of 2.8 kHz at the collector current density of 10 kA/cm(2), The dominant noise source of the HBT is not a surface-recombination current, but a bulk current noise. This is the lowest 1/f noise corner frequency among the III-V compound semiconductor transistors, and is comparable to those of low-noise Si bipolar junction transistors (BJT's). | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.subject | heterojunction bipolar transistor | - |
dc.subject | 1/f noise | - |
dc.subject | oscillator | - |
dc.subject | phase noise | - |
dc.subject | SURFACE PASSIVATION LAYER | - |
dc.subject | EMITTER-BASE JUNCTION | - |
dc.subject | 1/F NOISE | - |
dc.subject | HBT OSCILLATOR | - |
dc.subject | PHASE NOISE | - |
dc.subject | GAAS | - |
dc.subject | TRANSPORT | - |
dc.subject | BJTS | - |
dc.subject | GAIN | - |
dc.title | Low-frequency noise characterization of self-aligned AlGaAs/GaAs heterojunction bipolar transistors with a noise corner frequency below 3 kHz | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/22.734534 | - |
dc.author.google | Shin, JH | - |
dc.author.google | Kim, JY | - |
dc.author.google | Chung, YJ | - |
dc.author.google | Lee, JW | - |
dc.author.google | Suh, YS | - |
dc.author.google | Ahn, KH | - |
dc.author.google | Kim, BM | - |
dc.relation.volume | 46 | - |
dc.relation.issue | 11 | - |
dc.relation.startpage | 1604 | - |
dc.relation.lastpage | 1613 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.46, no.11, pp.1604 - 1613 | - |
dc.identifier.wosid | 000077071800002 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1613 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1604 | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 46 | - |
dc.contributor.affiliatedAuthor | Kim, BM | - |
dc.identifier.scopusid | 2-s2.0-0032206055 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 10 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SURFACE PASSIVATION LAYER | - |
dc.subject.keywordPlus | EMITTER-BASE JUNCTION | - |
dc.subject.keywordPlus | 1/F NOISE | - |
dc.subject.keywordPlus | HBT OSCILLATOR | - |
dc.subject.keywordPlus | PHASE NOISE | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | BJTS | - |
dc.subject.keywordPlus | GAIN | - |
dc.subject.keywordAuthor | heterojunction bipolar transistor | - |
dc.subject.keywordAuthor | 1/f noise | - |
dc.subject.keywordAuthor | oscillator | - |
dc.subject.keywordAuthor | phase noise | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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