Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
SCIE
SCOPUS
- Title
- Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
- Authors
- Kim, JK; Lee, JL; Lee, JW; Shin, HE; Park, YJ; Kim, T
- Date Issued
- 1998-11-16
- Publisher
- AMER INST PHYSICS
- Abstract
- Ohmic contact to p-type GaN with the lowest contact resistivity was developed by the surface treatment prior to Pd/Au metal deposition. The contact resistivity drastically decreased from 2.9 x 10(-2) to 4.3 x 10(-4) Ohm cm(2) by the surface treatment using aqua regia. The surface treatment plays a role in removing the surface oxide formed on p-type GaN during epitaxial growth, and subsequently in reducing the barrier height for holes at the interface of Pd/ p-type GaN, resulting in the good ohmic contacts to p-type GaN. (C) 1998 American Institute of Physics. [S0003-6951(98)01246-7].
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20603
- DOI
- 10.1063/1.122641
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 73, no. 20, page. 2953 - 2955, 1998-11-16
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