Spatially-controllable quantum well intermixing with stripe-size dependence in AlGaAs heterostructures

Abstract

Quantum well intermixing based on impurity-free vacancy disordering in Al0.7Ga0.93As/AlxGa1-xAs graded-index (x = 0.23-0.5) heterostructures has been performed an a single wafer with various mesa structures by a one-step annealing. From photoluminescence and laser characteristics, it has been demonstrated that the extent of quantum well intermixing can be spatially controlled by simply varying the mesa widths. It has been found that the bandgap shift induced by the intermixing increases as the mesa width decreases.