DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JL | - |
dc.contributor.author | Kim, H | - |
dc.contributor.author | Mun, JK | - |
dc.contributor.author | Maeng, SJ | - |
dc.date.accessioned | 2016-03-31T13:52:24Z | - |
dc.date.available | 2016-03-31T13:52:24Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1998-07 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 1998-OAK-0000000271 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/20743 | - |
dc.description.abstract | GaAs power MESFET's with 0.5-mu m T-shaped gate for Ku-band power applications have been developed using a new self-aligned and optical lithography, It displays a maximum current density of 350 mA/mm, an uniform transconductance of 150 mS/mm and a high gate-to-drain breakdown voltage of 35 V. Both the high breakdown voltage and the uniform transconductance were achieved by the new MESFET design incorporating an undoped GaAs cap and a thick lightly doped active layers. The breakdown voltage is the highest one among the values reported on the power devices. The device exhibits 0.61 W/mm power density and 47% power added efficiency with 9.0 dB associated gain at a drain bias of 12 V and an operation frequency of 12 GHz. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | HEMTS | - |
dc.title | A Ku-band T-shaped gate GaAs power MESFET with high breakdown voltage for satellite communications | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1109/55.701433 | - |
dc.author.google | LEE, JL | - |
dc.author.google | KIM, H | - |
dc.author.google | MUN, JK | - |
dc.author.google | MAENG, SJ | - |
dc.relation.volume | 19 | - |
dc.relation.issue | 7 | - |
dc.relation.startpage | 250 | - |
dc.relation.lastpage | 252 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.19, no.7, pp.250 - 252 | - |
dc.identifier.wosid | 000074366900013 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 252 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 250 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 19 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0032123104 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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