DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ihn, B | - |
dc.contributor.author | Lee, J | - |
dc.contributor.author | Roh, TM | - |
dc.contributor.author | Kim, YS | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-03-31T13:52:57Z | - |
dc.date.available | 2016-03-31T13:52:57Z | - |
dc.date.created | 2009-03-18 | - |
dc.date.issued | 1998-05-14 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.other | 1998-OAK-0000000242 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/20760 | - |
dc.description.abstract | The dispersion effect of current gain related to surface recombination in AlGaAs/GaAs HBTs has been studied. For an HBT with an emitter area of 3 x 20 mu m(2), the surface recombination current-to-total base current ratio is similar to 0.47 at < 100MHz, and the ratio is decreased to zero at frequencies between 100MHz and 3GHz, clearly indicating that the current gain is dispersive. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEE-INST ELEC ENG | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.subject | GAAS-MESFETS | - |
dc.title | Surface recombination related frequency dispersion of current gain in AlGaAs/GaAs HBTs | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1049/el:19980701 | - |
dc.author.google | Ihn, B | - |
dc.author.google | Lee, J | - |
dc.author.google | Roh, TM | - |
dc.author.google | Kim, YS | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 34 | - |
dc.relation.issue | 10 | - |
dc.relation.startpage | 1031 | - |
dc.relation.lastpage | 1033 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | ELECTRONICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.34, no.10, pp.1031 - 1033 | - |
dc.identifier.wosid | 000073962000068 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1033 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1031 | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 34 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-0032074724 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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