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Ferroelectric domains in epitaxial PbTiO3 and BaTiO3 thin films on MgO(100) SCIE SCOPUS

Title
Ferroelectric domains in epitaxial PbTiO3 and BaTiO3 thin films on MgO(100)
Authors
Kim, SPark, YKang, YPark, WBaik, SGruverman, AL
Date Issued
1998-01-14
Publisher
ELSEVIER SCIENCE SA
Abstract
Epitaxial PbTiO3 and BaTiO3 thin films were pl spared on MgO(100) by laser ablation and RF magnetron sputter deposition, respectively. X-ray diffraction (XRD), transmission electron microscopy (TEM), and atomic force microscopy (AFM) were used to investigate the ferroelectric domains in the grown films. in the PbTiO3 film, significant portions of a-domains were distributed in c-domains, which causes abundant 90 degrees domain population, On the other hand, the BaTiO3 film was mainly single c-domains without any meaningful domain structure. We attribute the difference in domain population of the two films to two reasons. One is the smaller phase transformation strain which comes from smaller tetragonality of BaTiO3, and the other is the larger compressive stress due to thermal mismatch which comes from lower T-c, of BaTiO3 than those of PbTiO3. (C) 1998 Elsevier Science S.A.
Keywords
ferroelectric thin films; laser ablation; sputtering; ferroelectric domain; sputtering; MISFIT RELAXATION MECHANISMS; STRAIN RELAXATION; CONFIGURATIONS; DEPOSITION; MGO
URI
https://oasis.postech.ac.kr/handle/2014.oak/20780
DOI
10.1016/S0040-6090(97)00270-8
ISSN
0040-6090
Article Type
Article
Citation
THIN SOLID FILMS, vol. 312, no. 1-2, page. 249 - 253, 1998-01-14
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