Single-voltage-operation pseudomorphic HEMT with low current dissipation for portable power applications

Abstract

A low current dissipation pseudomorphic high electron mobility transistor with a single-planar-doped AlGaAs/InGaAs/GaAs heterojunction structure, operating at a 3.3V single voltage supply, has been developed with a state-of-the-art performance. It exhibits a low operating current of 87.8mA al an output power of 21.8dBm with high power-added efficiency of 51.5% at a single voltage supply condition. This operating current value is the lowest among those reported for single voltage operation power devices for portable power applications.