DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yi, C | - |
dc.contributor.author | Kim, HU | - |
dc.contributor.author | Rhee, SW | - |
dc.date.accessioned | 2016-03-31T13:59:18Z | - |
dc.date.available | 2016-03-31T13:59:18Z | - |
dc.date.created | 2009-03-16 | - |
dc.date.issued | 2002-04-03 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.other | 2002-OAK-0000010342 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/20942 | - |
dc.description.abstract | Two-step deposition using O-2/He or N-2/He intermediate plasma treatment was studied to improve the characteristics of SiO2/Si interfaces. Under this method plasma damage on the Si surface could be minimized and the interface characteristics such as intermediate oxidation states, causing P-b center, and V-fb shift could be improved. In the case of the intermediate plasma treatment on 6 nm 1st oxide. the improvement of the interface characteristics was best. N-2/He plasma intermediate treatment showed better interface characteristics than O-2/He plasma treatment. The number of Si atoms (N-SiOx) in the sub-oxide region was decreased by approximately 27% after N-2/He plasma intermediate treatment compared with the sample without plasma treatment. Also, the transition layer thickness was decreased to 1.34 monolayers. P-b center density decreased from 4.7 X 10(12)/eV cm(2) to 2.29 X 10(11)/eV cm(2) due to nitrogen incorporation in the transition region. The moderate nitrogen incorporation near the SiO2/Si interface reduced the V-fb shift due to the decrease in the fixed oxide charge. (C) 2002 Elsevier Science B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.subject | chemical vapor deposition | - |
dc.subject | silicon oxide | - |
dc.subject | interface | - |
dc.subject | deposition process | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | LEVEL CONTROLLED INCORPORATION | - |
dc.subject | BULK SILICON DIOXIDE | - |
dc.subject | POLYCRYSTALLINE SILICON | - |
dc.subject | PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | SI/SIO2 INTERFACES | - |
dc.subject | SI-SIO2 INTERFACES | - |
dc.subject | CHLORINE ADDITION | - |
dc.subject | X-RAY | - |
dc.title | Improvement of the SiO2/Si interface characteristics by two-step deposition with intermediate plasma treatment using N-2/He or O-2/He gas | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1016/S0040-6090(02)00081-0 | - |
dc.author.google | Yi, C | - |
dc.author.google | Kim, HU | - |
dc.author.google | Rhee, SW | - |
dc.relation.volume | 408 | - |
dc.relation.issue | 1-2 | - |
dc.relation.startpage | 252 | - |
dc.relation.lastpage | 259 | - |
dc.contributor.id | 10052631 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.408, no.1-2, pp.252 - 259 | - |
dc.identifier.wosid | 000175889200039 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 259 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 252 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 408 | - |
dc.contributor.affiliatedAuthor | Rhee, SW | - |
dc.identifier.scopusid | 2-s2.0-0037012513 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | LEVEL CONTROLLED INCORPORATION | - |
dc.subject.keywordPlus | BULK SILICON DIOXIDE | - |
dc.subject.keywordPlus | POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | SI/SIO2 INTERFACES | - |
dc.subject.keywordPlus | SI-SIO2 INTERFACES | - |
dc.subject.keywordPlus | CHLORINE ADDITION | - |
dc.subject.keywordPlus | X-RAY | - |
dc.subject.keywordAuthor | chemical vapor deposition | - |
dc.subject.keywordAuthor | silicon oxide | - |
dc.subject.keywordAuthor | interface | - |
dc.subject.keywordAuthor | deposition process | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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