Synchrotron radiation excited total reflection X-ray fluorescence quantitative analysis of Si wafer by absolute fluorescence intensity calculation

Abstract

One of the principal industry standard means of measuring surface and near surface wafer contamination is the total reflection X-ray fluorescence (TXRF). Quantification by theoretical calculation of the absolute fluorescence intensity is introduced instead of the use of standards in the TXRF experiment using synchrotron radiation. The surface densities of contaminants in and on Si wafers are determined by comparing calculated results with measured intensities. (C) 2001 Elsevier Science B.V. All rights reserved.