Remote plasma enhanced metalorganic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium

Abstract

Effect of H-2 and N-2 plasma in the remote plasma enhanced metalorganic chemical vapor deposition of TiN (titanium nitride) from tetrakis-dimethyl-amido-titanium was studied in the deposition temperature range of 200-400 degreesC. The deposition rate with H-2 plasma is faster than with N-2 plasma and both processes showed similar activation energies, 16.7 and 18.3 kcal/mol, in the deposition temperature range of 200-300 degreesC. Above this temperature range, the deposition rate was decreased due to the gas phase dissociation of the precursor. H-2 plasma was effective in removing hydrocarbon impurities and carbon was incorporated as a form of TiC but with N-2 plasma, TiN film was formed with rough surface due to the incorporation of free carbon. The film with H-2 plasma showed low resistivity due to the lower incorporation of free carbon. (C) 2000 American Vacuum Society. [S0734-2101(00)04206-8].