Adhesion improvement of cubic BN : C film synthesized by a helicon wave plasma chemical vapor deposition process

Abstract

The growth and adhesion of cubic boron nitride:carbon (c-BN:C) film were investigated using Fourier transform infrared spectroscopy, Raman spectroscopy, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy. c-BN:C films were prepared on a Si(111) substrate by a helicon wave plasma chemical vapor deposition process using borazine, methane, and hydrogen beyond the critical substrate bias and temperature of -250 V and 450 degrees C, respectively. The improved adhesion of c-BN:C film with the addition of CH4 and hydrogen resulted from the simultaneous reduction of residual compressive stress and nonbonded (free) buron reaction with atmospheric water vapor. In addition, postheat treatment at 800 degrees C could further reduce the residual compressive stress in the c-BN:C film. The repetition technique of the combinative process of carbon and hydrogen addition together with postheat treatment (multistep deposition method) enabled the growth of thick c-BN:C film of similar to 1 Can. (C) 2000 American Vacuum Society. [S0734-2101(00)03003-7].