Effect of the carrier gas on the metal-organic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium

Abstract

The effect of carrier gas such as hydrogen, nitrogen and argon on the deposition rate, film morphology, resistivity and chemical composition of TiN film from tetrakis-dimethyl-amido-titanium (TDMAT) was studied. The deposition rate was higher with argon and nitrogen and lower with hydrogen when the substrate temperature was above 300 degrees C. The surface morphology of the film deposited with hydrogen carrier gas was rough due to the gas phase reaction. The film deposited at the higher substrate temperature with hydrogen had higher resistivity than in the film deposited with argon or nitrogen due to the rough surface. (C) 1998 Elsevier Science S.A. All rights reserved.