Effect of H-2 and N-2 in the remote plasma enhanced metal organic chemical vapor deposition of TiN from tetrakis-diethyl-amido-titanium

Abstract

The effect of H-2 and N-2 in the plasma in the remote plasma enhanced metal organic chemical vapor deposition (MOCVD) of TiN from tetratkis-diethyl-amido-titanium (TDEAT) was studied. The growth rate with H-2 in the plasma is about four times higher than that with N-2 in the plasma and both processes required similar activation energies. 9.70 and 9.33 kcal/mol, respectively. Carbon was incorporated as TiC and hydrocarbons in the TiN film and the fraction of carbon as TiC phase was higher using H-2 plasma. The film deposited with H-2 in the plasma had a lower resistivity due to the lower level of carbon incorporation in the film. The surface of the film deposited with N-2 in the plasma was rougher. It was believed that hydrogen radicals reacted with nitrogen atoms in TDEAT and produced Ti-rich film with lower carbon contents while nitrogen radicals produced films containing much more hydrocarbon. (C) 1998 Elsevier Science S.A.