Structural characterization of AlN thin film deposited on a single crystal of Al2O3(0001) substrate

Abstract

The structure of an AIN thin film deposited on an Al2O3 substrate was examined using symmetric and grazing incident X-ray diffraction (CID). Line profile analysis was applied to obtain quantitative structural information from a single peak. The orientational relationship between the thin film and the substrate is AIN(0001)parallel to Al2O3(0001) and AIN[10 (1) over bar 0]parallel to Al2O3[11 (2) over bar 0]. A disordered arrangement is observed inside of the mosaic block of which the collective effect may cause macroscopic residual stresses in the film. (C) 1998 Elsevier Science B.V.