Effect of carrier gas on metal-organic chemical vapour deposition of aluminium from dimethylethylamine alane

Abstract

The effect of carrier gas, such as H-2, He, and Ar, on the deposition rate, film morphology, resistivity, and chemical composition of Al thin film from dimethylethylamine alane (DMEAA) was investigated. The deposition rate was highest in H-2 carrier gas and lowest in Ar, when the substrate temperature is above 150 degrees C. The surface morphology of the film deposited in He carrier gas was rough and particles from gas phase reaction, were also observed on the film surface. The film deposited in He carrier gas had a higher resistivity than the films deposited in H-2 or Ar at the higher substrate temperature due to oxygen impurity incorporated in the film. (C) 1998 Chapman & Hall.