DC Field | Value | Language |
---|---|---|
dc.contributor.author | Roh, TM | - |
dc.contributor.author | Kim, Y | - |
dc.contributor.author | Suh, Y | - |
dc.contributor.author | Park, WS | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-03-31T14:09:12Z | - |
dc.date.available | 2016-03-31T14:09:12Z | - |
dc.date.created | 2009-03-23 | - |
dc.date.issued | 1997-08 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.other | 1997-OAK-0000009876 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21243 | - |
dc.description.abstract | A new channel-current model of GaAs MESFET suitable for applications to microwave computer-aided design (CAD) has been developed. This model includes the frequency-dispersion effects due to traps and thermal effects. The model parameters are extracted from pulsed I-V measurements at several ambient temperature and quiescent bias points. This model is verified by simulating nonlinear circuits, such as a power amplifier and a mixer. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.subject | FREQUENCY DISPERSION | - |
dc.subject | GAAS-MESFETS | - |
dc.title | A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/22.618416 | - |
dc.author.google | Roh, TM | - |
dc.author.google | Kim, Y | - |
dc.author.google | Suh, Y | - |
dc.author.google | Park, WS | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 45 | - |
dc.relation.issue | 8 | - |
dc.relation.startpage | 1252 | - |
dc.relation.lastpage | 1255 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.45, no.8, pp.1252 - 1255 | - |
dc.identifier.wosid | A1997XT11800016 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1255 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1252 | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 45 | - |
dc.contributor.affiliatedAuthor | Park, WS | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-0031210586 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 20 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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