A highly accurate Gummel plot model for thermal design of high-power microwave HBTs

Abstract

An accurate Gummel plot model of HBT at a wide range of current level and temperatures has been established. The model contains a bias- and temperature-dependent parasitic resistance and temperature-dependent temperature coefficient of base-emitter turn-on voltage. The average error between the measurement data nad calculated results was below 4% at 300-450 K, indicating that this model is useful for the optimum thermal design of high-power HBTs. (C) 1997 John Wiley & Sons, Inc.