DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, JH | - |
dc.contributor.author | Lee, JW | - |
dc.contributor.author | Chung, YJ | - |
dc.contributor.author | Ihn, BU | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-03-31T14:14:37Z | - |
dc.date.available | 2016-03-31T14:14:37Z | - |
dc.date.created | 2009-03-18 | - |
dc.date.issued | 1997-02 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 1997-OAK-0000009653 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21397 | - |
dc.description.abstract | It is shown that the use of an electrically abrupt emitter-base junction considerably reduces the 1/f noise of self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT). Although this device does not have depleted AlGaAs ledge passivation layer, the low-frequency noise spectra show a very low 1/f noise corner frequency of less than 10 kHz, which is much lower than previously reported value of about 100 kHz from conventional passivated or unpassivated AlGaAs/GaAs HBT's. Except for a residual generation-recombination (g-r) noise component, the noise power is comparable to that of Si BJT, It is also found that the low-frequency noise power of the AlGaAs/GaAs HBT is proportional to the extrinsic GaAs base surface recombination current square, Unlike the other HBT's reported, the noise sources associated with interface state and emitter-base (E-B) space charge region recombination are not significant for our device. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | SURFACE PASSIVATION LAYER | - |
dc.subject | CURRENT GAIN | - |
dc.subject | GAAS | - |
dc.subject | HBTS | - |
dc.subject | TRANSPORT | - |
dc.title | Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junction | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/55.553044 | - |
dc.author.google | Shin, JH | - |
dc.author.google | Lee, JW | - |
dc.author.google | Chung, YJ | - |
dc.author.google | Ihn, BU | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 18 | - |
dc.relation.issue | 2 | - |
dc.relation.startpage | 60 | - |
dc.relation.lastpage | 62 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.18, no.2, pp.60 - 62 | - |
dc.identifier.wosid | A1997WD27400010 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 62 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 60 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 18 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-0031076638 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SURFACE PASSIVATION LAYER | - |
dc.subject.keywordPlus | CURRENT GAIN | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | HBTS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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