DC Field | Value | Language |
---|---|---|
dc.contributor.author | Roh, TM | - |
dc.contributor.author | Suh, YS | - |
dc.contributor.author | Kim, YS | - |
dc.contributor.author | Park, WS | - |
dc.contributor.author | Kim, BM | - |
dc.date.accessioned | 2016-03-31T14:17:18Z | - |
dc.date.available | 2016-03-31T14:17:18Z | - |
dc.date.created | 2009-03-18 | - |
dc.date.issued | 1996-11 | - |
dc.identifier.issn | 0895-2477 | - |
dc.identifier.other | 1996-OAK-0000009557 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21472 | - |
dc.description.abstract | A new channel current model to accurately represent I-V dimes has been developed, and its effect on the nonlinear parameters of MESFET models such as I-ds, C-gs, C-gd, and C-ds has been investigated for lineal power amplifier design. The channel current model should be constructed from pulsed I-V data at operation bias point and die nonlinear behavior of a GaAs MESFET is strongly dependent on the C-gs model. (C) 1996 John Wiley & Sons, Inc. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | JOHN WILEY & SONS INC | - |
dc.relation.isPartOf | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
dc.subject | nonlinear MESFET modeling | - |
dc.subject | linear power amplifier | - |
dc.title | A highly accurate mesfet model to predict the nonlinear behavior of a linear power amplifier | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.author.google | Roh, TM | - |
dc.author.google | Suh, YS | - |
dc.author.google | Kim, YS | - |
dc.author.google | Park, WS | - |
dc.author.google | Kim, BM | - |
dc.relation.volume | 13 | - |
dc.relation.issue | 4 | - |
dc.relation.startpage | 184 | - |
dc.relation.lastpage | 186 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCIE | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.13, no.4, pp.184 - 186 | - |
dc.identifier.wosid | A1996VL89100003 | - |
dc.date.tcdate | 2017-12-04 | - |
dc.citation.endPage | 186 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 184 | - |
dc.citation.title | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | - |
dc.citation.volume | 13 | - |
dc.contributor.affiliatedAuthor | Kim, BM | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
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