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dc.contributor.authorAn, KS-
dc.contributor.authorPark, RJ-
dc.contributor.authorKim, JS-
dc.contributor.authorPark, CY-
dc.contributor.authorKim, CY-
dc.contributor.authorChung, JW-
dc.contributor.authorKinoshita, T-
dc.contributor.authorKakizaki, A-
dc.date.accessioned2016-03-31T14:19:15Z-
dc.date.available2016-03-31T14:19:15Z-
dc.date.created2009-02-28-
dc.date.issued1996-05-
dc.identifier.issn0368-2048-
dc.identifier.other1996-OAK-0000009490-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/21523-
dc.description.abstractThe interface and silicide formation on Si(111)7x7 surface at 300 degrees C by Mg deposition was studied using low energy electron diffraction and synchrotron radiation photoelectron emission spectroscopy. At 300 degrees C only Mg/Si(111)1x1 structure was observed, which is different structure from the Mg/Si(111)1x1 surface formed at room temperature. A disordered Mg film was formed for further Mg deposition. We observed that the thin silicide layer between Mg film and Si substrate play a role as interdiffusion barrier for Mg atoms.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.relation.isPartOfJOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA-
dc.subjectSYSTEM-
dc.titlePHOTOEMISSION STUDY FOR MG/SI(111)1X1 SURFACE-
dc.typeArticle-
dc.contributor.college물리학과-
dc.identifier.doi10.1016/0368-2048(96)02947-7-
dc.author.googleAN, KS-
dc.author.googlePARK, RJ-
dc.author.googleKIM, JS-
dc.author.googlePARK, CY-
dc.author.googleKIM, CY-
dc.author.googleCHUNG, JW-
dc.author.googleKINOSHITA, T-
dc.author.googleKAKIZAKI, A-
dc.relation.volume80-
dc.relation.startpage165-
dc.relation.lastpage168-
dc.contributor.id10052578-
dc.relation.journalJOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameConference Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, v.80, pp.165 - 168-
dc.identifier.wosidA1996VA96200040-
dc.date.tcdate2019-01-01-
dc.citation.endPage168-
dc.citation.startPage165-
dc.citation.titleJOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA-
dc.citation.volume80-
dc.contributor.affiliatedAuthorChung, JW-
dc.identifier.scopusid2-s2.0-0039566431-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc8-
dc.type.docTypeArticle; Proceedings Paper-
dc.relation.journalWebOfScienceCategorySpectroscopy-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaSpectroscopy-

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