DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, TH | - |
dc.contributor.author | Yoon, HJ | - |
dc.contributor.author | Kim, TS | - |
dc.contributor.author | Lee, JK | - |
dc.date.accessioned | 2016-03-31T14:21:49Z | - |
dc.date.available | 2016-03-31T14:21:49Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1996-04-14 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.other | 1996-OAK-0000009402 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21593 | - |
dc.description.abstract | RF glow-discharge plasmas provide mild energetic ion bombardment of exposed surfaces. The characteristics of a 10 MHz RF glow-discharge Ar plasma are studied by particle-in-cell simulation. The model simulates a spherical plasma device using a one-dimensional plasma model. The code is used to determine the breakdown voltage, V-rf, for a given pd, where rho is the gas pressure and d is the plasma discharge length. These values are then compared with Paschen's law for the DC case. Also, the breakdown voltage as a function of driver frequency is investigated. Due to the nonlinear capacitance of the plasma, the current and voltage waveforms are found to contain higher harmonic components and sub-harmonic components. Above a certain power level of the driver, sub-harmonics which are indicative of a period-doubling (PD) bifurcation are found to become dominant. The PD thresholds for varying pd, the magnitude of the current and the voltage of the Fourier-analysed components as a function of applied RF voltages are calculated. The PD threshold is always higher than the breakdown threshold. Finally, the pressure-dependence of the sheath width is discussed. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.subject | SHEATH | - |
dc.title | A particle-in-cell simulation of the breakdown and period doubling thresholds for a RF discharge Ar plasma | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1088/0022-3727/29/4/011 | - |
dc.author.google | CHUNG, TH | - |
dc.author.google | YOON, HJ | - |
dc.author.google | KIM, TS | - |
dc.author.google | LEE, JK | - |
dc.relation.volume | 29 | - |
dc.relation.issue | 4 | - |
dc.relation.startpage | 1014 | - |
dc.relation.lastpage | 1020 | - |
dc.contributor.id | 10158178 | - |
dc.relation.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.29, no.4, pp.1014 - 1020 | - |
dc.identifier.wosid | A1996UH36400011 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1020 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1014 | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 29 | - |
dc.contributor.affiliatedAuthor | Lee, JK | - |
dc.identifier.scopusid | 2-s2.0-0030127013 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 11 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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