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Cited 11 time in webofscience Cited 13 time in scopus
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dc.contributor.authorChung, TH-
dc.contributor.authorYoon, HJ-
dc.contributor.authorKim, TS-
dc.contributor.authorLee, JK-
dc.date.accessioned2016-03-31T14:21:49Z-
dc.date.available2016-03-31T14:21:49Z-
dc.date.created2009-02-28-
dc.date.issued1996-04-14-
dc.identifier.issn0022-3727-
dc.identifier.other1996-OAK-0000009402-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/21593-
dc.description.abstractRF glow-discharge plasmas provide mild energetic ion bombardment of exposed surfaces. The characteristics of a 10 MHz RF glow-discharge Ar plasma are studied by particle-in-cell simulation. The model simulates a spherical plasma device using a one-dimensional plasma model. The code is used to determine the breakdown voltage, V-rf, for a given pd, where rho is the gas pressure and d is the plasma discharge length. These values are then compared with Paschen's law for the DC case. Also, the breakdown voltage as a function of driver frequency is investigated. Due to the nonlinear capacitance of the plasma, the current and voltage waveforms are found to contain higher harmonic components and sub-harmonic components. Above a certain power level of the driver, sub-harmonics which are indicative of a period-doubling (PD) bifurcation are found to become dominant. The PD thresholds for varying pd, the magnitude of the current and the voltage of the Fourier-analysed components as a function of applied RF voltages are calculated. The PD threshold is always higher than the breakdown threshold. Finally, the pressure-dependence of the sheath width is discussed.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.relation.isPartOfJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.subjectSHEATH-
dc.titleA particle-in-cell simulation of the breakdown and period doubling thresholds for a RF discharge Ar plasma-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1088/0022-3727/29/4/011-
dc.author.googleCHUNG, TH-
dc.author.googleYOON, HJ-
dc.author.googleKIM, TS-
dc.author.googleLEE, JK-
dc.relation.volume29-
dc.relation.issue4-
dc.relation.startpage1014-
dc.relation.lastpage1020-
dc.contributor.id10158178-
dc.relation.journalJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICS D-APPLIED PHYSICS, v.29, no.4, pp.1014 - 1020-
dc.identifier.wosidA1996UH36400011-
dc.date.tcdate2019-01-01-
dc.citation.endPage1020-
dc.citation.number4-
dc.citation.startPage1014-
dc.citation.titleJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.citation.volume29-
dc.contributor.affiliatedAuthorLee, JK-
dc.identifier.scopusid2-s2.0-0030127013-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc11-
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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