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dc.contributor.authorLEE, SK-
dc.contributor.authorKIM, HG-
dc.contributor.authorCHUNG, WJ-
dc.contributor.authorKANG, BK-
dc.contributor.authorKIM, O-
dc.contributor.author강봉구-
dc.date.accessioned2016-03-31T14:22:14Z-
dc.date.available2016-03-31T14:22:14Z-
dc.date.issued1996-01-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.identifier.citationv.35-
dc.identifier.citationno.2B-
dc.identifier.citationpp.919-922-
dc.identifier.issn0021-4922-
dc.identifier.other1996-OAK-0000009385-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/21605-
dc.description.abstractP-channel metal-oxide-semiconductor (PMOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly-Si0.82Ge0.18) films for the first time. The transistors with a channel length of 1.5 mu m exhibit good electrical characteristics. The device performance is degraded in proportion to oxygen content, based on measurements using secondary ion mass spectrometry (SIMS). After electron cyclotron resonance (ECR) plasma hydrogenation under optimal conditions, the density of trap states is markedly decreased in short-channel devices, resulting in relatively low leakage current (similar to 12.1pA/mu m) and high field-effect hole mobility (similar to 13.4cm(2)/V . s).-
dc.description.statementofresponsibilityX-
dc.publisherJAPAN J APPLIED PHYSICS-
dc.subjectpolycrystalline silicon germanium-
dc.subjectTFT-
dc.subjectECR plasma hydrogenation-
dc.subjectRTCVD-
dc.subjectTEMPERATURE-
dc.titleFabrication of P-channel MOS TFT's on rapid thermal CVD polycrystalline silicon-germanium films-
dc.typeConference-
dc.contributor.college전자전기공학과-
dc.author.googleLEE, SK-
dc.author.googleKIM, HG-
dc.author.googleCHUNG, WJ-
dc.author.googleKANG, BK-
dc.author.googleKIM, O-
dc.relation.volume35-
dc.relation.issue2B-
dc.relation.startpage919-
dc.relation.lastpage922-
dc.contributor.id10071834-
dc.publisher.locationJA-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameConference Papers-
dc.type.docTypeProceedings Paper-

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