MOCVD-grown Al0.07Ga0.93As high-power laser diode array

Abstract

A laser diode array structure consisting of a 150 Angstrom Al0.07Ga0.93As single quantum well active region operating near 810 nm, cladded with an AlGaAs graded-index sep arate confinement heterostructure, has been grown by MOCVD. 3.1 W output power has been obtained from the 500 mu m aperture, uncoated laser diode array with 460 mu m cavity length. The internal quantum efficiency was found to be 75.8% and the internal loss 4.83 cm(-1).