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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Maeng, SJ | - |
| dc.contributor.author | Chun, SS | - |
| dc.contributor.author | Lee, JL | - |
| dc.contributor.author | Lee, CS | - |
| dc.contributor.author | Youn, KJ | - |
| dc.contributor.author | Park, HM | - |
| dc.date.accessioned | 2016-03-31T14:24:43Z | - |
| dc.date.available | 2016-03-31T14:24:43Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 1995-12 | - |
| dc.identifier.issn | 0018-9480 | - |
| dc.identifier.other | 1996-OAK-0000009293 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21671 | - |
| dc.description.abstract | For CDMA/AMPS dual-mode cellular phones, a power amplifier operating at 3.3 V has been developed for the first time. It consists of linear GaAs power MESFET's and an output matching circuit which reduces the second and the third harmonics. The amplifier shows an output power of 31.5 dBm and a power-added efficiency of 61% for AMPS mode. The third-order intermodulation distortion and the fifth-order one are measured to be -32 dBc and -45 dBc at an output power of 26 dBm for CDMA mode. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
| dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
| dc.title | A GaAs power amplifier for 3.3 V CDMA/AMPS dual-mode cellular phones | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.identifier.doi | 10.1109/22.475643 | - |
| dc.author.google | CHUN, SS | - |
| dc.author.google | LEE, CS | - |
| dc.author.google | LEE, JL | - |
| dc.author.google | MAENG, SJ | - |
| dc.author.google | PARK, HM | - |
| dc.author.google | YOUN, KJ | - |
| dc.relation.volume | 43 | - |
| dc.relation.issue | 12 | - |
| dc.relation.startpage | 2839 | - |
| dc.relation.lastpage | 2844 | - |
| dc.contributor.id | 10105416 | - |
| dc.relation.journal | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.43, no.12, pp.2839 - 2844 | - |
| dc.identifier.wosid | A1995TN47600018 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 2844 | - |
| dc.citation.number | 12 | - |
| dc.citation.startPage | 2839 | - |
| dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
| dc.citation.volume | 43 | - |
| dc.contributor.affiliatedAuthor | Lee, JL | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 13 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
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- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg